note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0019c doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet part number / ordering information 1 / sft 6678 m __ tx | | | | | | | | | | | | | | | + scre ening 2 / __ = not screen tx = tx level txv = txv level s = s level | | | + lead bend 3 / 4 / _ = straight leads ub = up bend db = down bend + package 3 / m = to - 254 z = to - 254 z /3 = to - 3 sft 6678 series 15 amps 400 volts npn high speed power transistor application notes: ? replaces industry standard 2n6678 ? designed for high voltage, high speed, power switching applications such as: ? off - line supplies ? converter circuits ? pulse width modulated regulators ? motor controls ? deflection circuits maximum ratings symbol value units collector ? emitter voltage v ceo 400 volts collector ? base voltage v cbo 650 volts emitter ? base voltage v ebo 8.0 volts continuous collector current i c 15 amps continuous base current i b 5.0 amps operating and storage temperature t j , t stg - 65 to +200 c total power dissipation @ t c =25c derate above 25c p d 175 1.0 w w/c maximum thermal resistance (junction to case) r 0 jc 1.0 oc/w to - 3 (/3) to - 254 (m) to - 254 (z) available part numbers: sft6678/3 sft6678m sft6678z SFT6678MDB sft6678zdb sft6678mub sft6678zub pin assignmen t (standard) package collector emitter base to - 3 (/3) case pin 2 pin 3 to - 254 (m) pin 1 pin 2 pin 3 to - 254 (z) pin 1 pin 2 pin 3
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0019c doc solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft 6678 series electrical characteristics symbol min max units collector cutoff current v ce =650v dc , v be (off) =1.5v dc t c =25c t c =100c i cev - - 0.1 1.0 ma collector ? base leakage current v cb =650v i cbo - 1 ma emitter cutoff current (v eb = 8v, i c = 0) i ebo - 2 ma collector - emitter sustaining voltage (i c = 200ma, i b = 0) v ceo(sus) 400 - v dc dc current gain * vce=3v, 1c=15a, ta= 25c vce=3v, 1c=1a, ta= 25c vce=3v, 1c=15a,ta= - 55c h f e1 h f e2 h f e3 8 15 4 - - - base - emitter saturation voltage * (ic = 15a dc , ib = 3a dc ) v be (sat) - 1.5 v dc collector - emitter saturation voltage * (ic = 15a, ib = 3a) (tc = 25 c) (tc = 100 c) v ce (sat) 1.5 2.0 v dc second breakdown (t = 1.0 sec, t c = 25 o c) (v c c = 11.7v) (v cc = 20v) (v cc = 100v) i s/b1 i s/b2 i s/b3 15.0 8.75 0.3 - - - a a a reverse bias second breakdown (v be (off) = 1 to 6v, v clamp = 450v, t c < 100 o c) rbsoa 15.0 - a current gain (i c = 1a, v ce = 10v dc, f = 5mhz) |h fe | 3 10 output capacitance (v cb = 10v dc , f = 0.1mhz) c ob 150 500 pf delay time storage time rise time fall time (v cc = 200v dc , i c = 15a dc , i b1 = i b2 = 3a dc , t p = 50 m sec, duty cycle < 2% v b = 6v dc , r l = 13.5 w ) t d t s t r t f ?? ?? 0.1 0.6 2.5 0.5 m sec cross over time (i c = 15 a(pk), v clamp = 450v, i b1 = 3 a, v be(off) = 6v) t c ?? 0.5 m sec notes: * pulse test: pulse width = 300 m s, duty cycle < 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil - prf - 19500. 3 / for package outlines contact factory. 4 / up and down bend configurations available for m and z (to - 254 and to - 254z) packages only. 5 / all electrical characteristics @ 25 o c, unless otherwise specified.
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